Gap-Fill Keyhole Repair Using Printable Dielectric Material

ABSTRACT

Disposable gate structures are formed on a semiconductor substrate. A planarization dielectric layer is deposited over the disposable gate structures and planarized to provide a top surface that is coplanar with top surface of the disposable gate structures. The planarization dielectric layer at this point includes gap-fill keyholes between narrowly spaced disposable gate structures. A printable dielectric layer is deposited over the planarization dielectric layer to fill the gap-fill keyholes. Areas of the printable dielectric layer over the gap-fill keyholes are illuminated with radiation that cross-links cross-linkable bonds in the material of the printable dielectric layer. Non-crosslinked portions of the printable dielectric layer are subsequently removed selective to crosslinked portions of the printable dielectric layer, which fills at least the upper portion of each gate-fill keyhole. The disposable gate structures are removed to form gate cavities. The gate cavities are filled with a gate dielectric and a gate electrode.

BACKGROUND

The present disclosure relates to a method of manufacturingsemiconductor structures, and particularly to a method of repairinggap-fill keyholes in a planarization dielectric layer, and structuresformed thereby.

Planarization dielectric layers are employed in semiconductormanufacturing to provide a dielectric material structure having a planartop surface. Planarization dielectric layers can be employed for variouspurposes including, but not limited to, providing a dielectric templatethat embeds disposable material structures that are selectively removedand replaced with permanent structures. For example, in a replacementgate integration scheme, disposable gate structures can be formed on asemiconductor substrate, and a planarization dielectric layer can beformed thereupon. The planarization dielectric layer is subsequentlyplanarized to provide a horizontal top surface that is coplanar withtopmost surfaces of the disposable gate structures. The disposable gatestructures are then removed selective to the planarization dielectriclayer. Cavities in the disposable gate structures are filled withmaterials to form permanent structures, which are also referred to asreplacement structures.

Dielectric materials that are deposited over protruding structures canhave gap-fill keyholes. Gap-fill keyholes are generally formed between apair of structures protruding above a substrate when the spacing betweenthe pair is narrow and/or the sidewalls of the pair do not have asufficient taper. A “gap-fill keyhole” refers to any cavity within adielectric material layer that results from the inability of adeposition process that deposits the dielectric material layer tocompletely fill a space between two or more neighboring protrudingstructures that are present prior to deposition of the dielectricmaterial layer.

Gap-fill keyholes function as a trap for materials deposited over thedielectric material layer, especially if the top of the gap-fill keyholeis exposed by recessing an initial top surface of the dielectricmaterial layer. When a conductive material is deposited over thedielectric material layer, the conductive material can be depositedwithin the dielectric material layer to form a conductive channel thatelectrically shorts device components or blocks subsequent attempts toetch contact holes within the dielectric material layer.

BRIEF SUMMARY

Disposable gate structures are formed on a semiconductor substrate. Aplanarization dielectric layer is deposited over the disposable gatestructures and planarized to provide a top surface that is coplanar withtop surface of the disposable gate structures. The planarizationdielectric layer at this point includes gap-fill keyholes betweennarrowly spaced disposable gate structures. A printable dielectric layeris deposited over the planarization dielectric layer to fill thegap-fill keyholes. Areas of the printable dielectric layer over thegap-fill keyholes are illuminated with radiation that cross-linkscross-linkable bonds in the material of the printable dielectric layer.Non-crosslinked portions of the printable dielectric layer aresubsequently removed selective to crosslinked portions of the printabledielectric layer, which fill at least the upper portion of eachgate-fill keyhole. The disposable gate structures are removed to formgate cavities. The gate cavities are filled with a gate dielectric and agate electrode.

According to an aspect of the present disclosure, a method of forming astructure is provided, which includes: forming protruding structuresover a top surface of a substrate; forming a dielectric layer includinga gap-fill keyhole on the substrate, wherein the dielectric layer ispresent between neighboring pairs of the protruding structures; applyinga printable dielectric material layer over the dielectric layer, theprintable dielectric material layer filling the gap-fill keyhole;lithographically exposing a portion of the printable dielectric materiallayer with radiation, wherein a crosslinked printable dielectricmaterial portion is formed at least within an upper portion of thegap-fill keyhole; and removing non-crosslinked portions of the printabledielectric material layer from above the dielectric layer.

According to another aspect of the present disclosure, a structureincluding a dielectric layer located on a substrate is provided. Afilled gap-fill keyhole is embedded in the dielectric layer. The filledgap-fill keyhole includes a crosslinked printable dielectric materialportion having a top surface that is coplanar with a top surface of thedielectric layer.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

In the present disclosure, drawings that are labeled with the samenumeric label represent the same stage of a manufacturing process.Drawings that are labeled with the suffix “A” are top-down views.Drawings that are labeled with the suffix “B” are verticalcross-sectional views along a vertical plane B-B′ in the top-down viewlabeled with the same numeric label and the suffix “A.”

FIGS. 1A and 1B are views of an exemplary semiconductor structure afterformation of disposable gate stack layers according to an embodiment ofthe present disclosure.

FIGS. 2A and 2B are views of the exemplary semiconductor structure afterformation of disposable gate structures, which are protruding structureslocated above a top surface of a semiconductor substrate, according toan embodiment of the present disclosure.

FIGS. 3A and 3B are view of the exemplary semiconductor structure afteroptional additional patterning of the disposable gate structuresaccording to an embodiment of the present disclosure.

FIGS. 4A and 4B are views of the exemplary semiconductor structure afterremoval of a photoresist layer employed for the optional additionalpatterning of the disposable gate structures according to an embodimentof the present disclosure.

FIGS. 5A and 5B are views of the exemplary semiconductor structure afterdeposition of a planarization dielectric layer over the disposable gatestructures according to an embodiment of the present disclosure.

FIGS. 6A and 6B are views of the exemplary semiconductor structure afterplanarization of the planarization dielectric layer according to anembodiment of the present disclosure.

FIGS. 7A and 7B are views of the exemplary semiconductor structure afterformation of a printable dielectric material layer according to anembodiment of the present disclosure.

FIGS. 8A and 8B are views of the exemplary semiconductor structure afterlithographic exposure of the printable dielectric material layeraccording to an embodiment of the present disclosure.

FIGS. 9A and 9B are views of the exemplary semiconductor structure afterdevelopment of the exposed printable dielectric material layer accordingto an embodiment of the present disclosure.

FIGS. 10A and 10B are views of the exemplary semiconductor structureafter removal of the disposable gate structures according to anembodiment of the present disclosure.

FIGS. 11A and 11B are views of the exemplary semiconductor structureafter formation of replacement gate structures according to anembodiment of the present disclosure.

FIGS. 12A and 12B are view of the exemplary semiconductor structureafter formation of a contact-level dielectric layer and contact viastructures according to an embodiment of the present disclosure.

FIGS. 13A and 13B are views of a variation of the exemplarysemiconductor structure according to an embodiment of the presentdisclosure.

DETAILED DESCRIPTION

As stated above, the present disclosure relates to a method of repairinggap-fill keyholes in a planarization dielectric layer and structuresformed thereby, which are now described in detail with accompanyingfigures. Like and corresponding elements mentioned herein andillustrated in the drawings are referred to by like reference numerals.The drawings are not necessarily drawn to scale.

Referring to FIGS. 1A and 1B, an exemplary semiconductor structureaccording to an embodiment of the present disclosure includes asubstrate 8 and material layers formed thereupon. The substrate 8 can bea semiconductor-on-insulator (SOI) substrate or a bulk semiconductorsubstrate. The substrate 8 includes a semiconductor region 10, which isa region of a single crystalline semiconductor material.

The semiconductor region 10 can be a top semiconductor layer of an SOIsubstrate or a bulk semiconductor substrate. The semiconductor region 10can have a p-type doping or n-type doping, or can include an intrinsicsemiconductor material. Shallow trench isolation structures 20 includinga dielectric material can be formed in the substrate 8 to provideelectrical isolation between neighboring semiconductor devices to beformed.

In one embodiment, the material layers can be disposable gate stacklayers. The disposable gate stack layers can include a stack, frombottom to top, of a disposable gate dielectric layer 50L and adisposable gate material layer 52L. The disposable gate stack layers(50L, 52L) can be “blanket” layers, i.e., unpatterned planar layers,each having a uniform thickness throughout.

The disposable gate dielectric layer 50L includes a dielectric material,which can be silicon oxide, silicon nitride, silicon oxynitride, or astack thereof. The thickness of the disposable gate dielectric layer 50Lcan be from 1 nm to 10 nm, although lesser and greater thicknesses canalso be employed.

The disposable gate material layer 52L includes a disposable material,which can be a doped or undoped semiconductor material, a metallicmaterial, a dielectric material, or a combination thereof. Thedisposable material is selected so that the disposable material can beremoved while the material of a planarization dielectric layer (to beformed in a subsequent processing step) is not removed as will bedescribed below. The disposable material of the disposable gate materiallayer 52L can be, for example, a doped or undoped, amorphous orpolycrystalline, elemental or compound, semiconductor material,organosilicate glass, silicon oxide, silicon nitride, or a metallicmaterial. The thickness of the disposable gate material layer 52L can befrom 100 nm to 500 nm, although lesser and greater thicknesses can alsobe employed. The disposable gate material layer 52L can be deposited,for example, by chemical vapor deposition (CVD), physical vapordeposition (PVD), or a combination thereof.

Referring to FIGS. 2A and 2B, protruding structures, i.e., structuresthat protrude above a planar top surface of the substrate 8, are formedon the substrate by patterning the material layers formed in theprocessing step of FIG. 1.

In one embodiment, the protruding structures are disposable gatestructures that are formed by patterning the disposable gate stacklayers (50L, 52L). Specifically, the disposable gate stack layers (50L,52L) can be patterned by applying a photoresist 57 thereupon,lithographically developing the photoresist 57, developing thephotoresist 57, and anisotropically etching physically exposed portionsof the disposable gate stack layers (50L, 52L) employing the patternedphotoresist 57 as an etch mask. The patterned photoresist 57 issubsequently removed, for example, by ashing.

The remaining portions of the disposable gate material layer 52L aredisposable gate material portions 52. The remaining portions of thedisposable gate dielectric layer 50L are disposable gate dielectrics 50.Each disposable gate structure (50, 52) includes a disposable gatematerial portion 52 and a disposable gate dielectric 50. The sidewallsof the disposable gate material portions 52 are vertically coincident,i.e., coincide in a top down view along a direction perpendicular to thetop surface of the semiconductor substrate 8, with the sidewalls of thedisposable gate dielectrics 50.

In one embodiment, the disposable gate structures (50, 52) can be formedas a one-dimensional array of lines having a uniform pitch therein.Further, the disposable gate structures (50, 52) can have the same width(i.e., the dimension between opposing sidewalls in a disposable gatestructure) along the direction of the periodicity of the array (e.g.,along the horizontal direction of the B-B′ plane in FIG. 2A).

In another embodiment, the disposable gate structures (50, 52) may beformed without periodicity to include random shapes in a top-down view.

Referring to FIGS. 3A and 3B, additional patterning of the disposablegate structures (50, 52) can be optionally performed, for example, byapplying another photoresist 59 over the substrate 8 and the disposablegate structures (50, 52), lithographically exposing the photoresist 59,developing the photoresist 59, and removing the physically exposedportions of the disposable gate structures (50, 52) selective to thesemiconductor region 10 and the shallow trench isolation structures 20.

Referring to FIGS. 4A and 4B, the patterned photoresist 59 issubsequently removed, for example, by ashing. While an embodimentemploying two separate sets of lithographic processing steps isillustrated herein, an embodiment in which a single photoresist isemployed to form patterned disposable gate structures (50, 52) of FIGS.4A and 4B can also be employed.

Referring to FIGS. 5A and 5B, a planarization dielectric layer 60 isdeposited over the disposable gate structures (50, 52) by a depositionprocess such as low pressure chemical vapor deposition (CVD), plasmaenhanced chemical vapor deposition (PECVD), high density plasma chemicalvapor deposition (HDPCVD), rapid thermal chemical vapor deposition(RTCVD), subatmospheric chemical vapor deposition (SACVD), or any otherdeposition method that is vulnerable to keyhole formation due to thetopology of underlying structures.

Due a greater deposition rate of a material on horizontal surfacesrelative to deposition rate on vertical surfaces, or corners, a cavityis formed in areas where the aspect ratio of a space between aneighboring pair of protruding structures exceeds a maximum aspect ratiothat the deposition process is capable of providing a gap-free fill. Themaximum aspect ratio is a function of the height of, and the lateralspacing between, the protruding structures, the conformity of thedeposition process employed to form the planarization dielectric layer60, and the viscosity of the material of the planarization dielectriclayer 60.

In a vertical cross-sectional view perpendicular to the lengthwisedirections of a pair of parallel protruding structures, thecross-sectional shape of the cavity can be a keyhole, i.e., a shape thathas vertically increasing lateral dimensions from the bottommost portionto a first height and vertically decreasing lateral dimensions from thefirst height to a second height that is greater than the first heightand is about the height of the protruding structures. Thus, the cavitiesformed in the planarization dielectric layer 60 are referred to gap-fillkeyholes 61, i.e., keyhole-shaped cavities that are formed by a failureto completely fill a gap between adjacent protruding structures. Thegap-fill keyholes 61 can run in a direction parallel to sidewalls of aneighboring pair of protruding structures if the protruding structuresare parallel to each other and are spaced by less than the minimumdimension.

The material of the planarization dielectric layer 60 is herein referredto a first dielectric material, which can be, but is not limited to,silicon oxide, silicon nitride, silicon oxynitride, phosphosilicateglass (PSG), fluorosilicate glass (FSG), borophosphosilicate glass(BPSG), borosilicate glass (BSG), and a combination thereof. In oneembodiment, the first dielectric material does not include carbon.

In one embodiment, the protruding structures include disposable gatestructures (50, 52). In one embodiment, a neighboring pair of thedisposable gate structures (50, 52) can be parallel to each other sothat one of the pair of the disposable gate structures (50, 52) has asidewall that is parallel to another sidewall of the other of the pairof the disposable gate structures (50, 52), and a lengthwise directionof a gap-fill keyhole 61 therebetween is parallel to the two sidewalls.

In one embodiment, the thickness of the planarization dielectric layer60 is selected so that all planar top surfaces of the planarizationdielectric layer 60 outside the gap-fill keyholes 61 are above thetopmost surfaces of the protruding structures such as the disposablegate structures (50, 52).

Referring to FIGS. 6A and 6B, the planarization dielectric layer 60 isplanarized to provide a planar top surface that extends throughout theentirety of the planar dielectric layer 60. For example, chemicalmechanical planarization (CMP) can be employed in which the top surfacesof the protruding structures are employed as a stopping layer. Theplanarization dielectric layer 60 is present between neighboring pairsof the protruding structures. If a neighboring pair of protrudingstructures is laterally spaced by a dimension less than the minimumdimension discussed above, a gap-fill keyhole 61 is present between theneighboring pair of protruding structures.

Referring to FIGS. 7A and 7B, a printable dielectric material layer 70is formed over the planarization dielectric layer 60. As used herein, a“printable dielectric material” refers to a class of materials which canbe coated as a self-planarizing material layer, and subsequentlycross-linked into a dielectric material using a lithographic process.Thus, the printable dielectric material can be a polymer havinglight-sensitive unlinked crosslinkable bonds that become crosslinkedduring the lithographic exposure. The lithographic process can be, forexample, 193 nm photolithography, extreme UV lithography (EUV), orelectron beam lithography. Exemplary printable dielectric materialsinclude, but are not limited to, hydrogen silsesquioxane (HSQ) andHSQ-based materials, which are cross-linked into SiO₂ under electronbeam or EUV exposure, and methyl silsesquioxane (MSQ) and MSQ-basedmaterials which are cross-linked into organosilicate glass (OSG)including Si, C, O, and H by 193 nm photolithography or EUV lithography.Organosilicate glass is also referred to as a SiCOH dielectric.

The printable dielectric material layer 70 can be formed, for example,by applying a printable dielectric material employing spin coating. Theviscosity of the printable dielectric material is low enough to enableflow of the printable dielectric material into the gap-fill keyholes 61and to fill the gap-fill keyholes 61. The printable dielectric materiallayer 70 is formed to have a top surface above a topmost surface of theplanarization dielectric layer 60. The dielectric material of theprintable dielectric material layer 70 is herein referred to as a seconddielectric material.

In one embodiment, the printable dielectric material layer 70 includes aprecursor to an organosilicate glass (OSG). The precursor includes eachof silicon, oxygen, carbon, and hydrogen at an atomic concentrationgreater than 1%, and is transformed into the OSG upon lithographicexposure.

In one embodiment, the first dielectric material of the planarizationdielectric layer 60 does not include carbon, and the second dielectricmaterial of the printable dielectric material layer includes carbon.

Referring to FIGS. 8A and 8B, the printable dielectric material layer 70is lithographically exposed. Specifically, portions of the printabledielectric material layer 70 are lithographically exposed withradiation, which can be electromagnetic radiation or radiation withelectron beams. The lithographically exposed portions of the printabledielectric material layer 70 are located in and above the gap-fillkeyholes 61 (See FIGS. 6A and 6B) that are filled with the printabledielectric material. Crosslinked printable dielectric material portions70E are formed at least within upper portions of the gap-fill keyholes61 and above gap-fill keyholes 61.

Portions of the printable dielectric material layer 70 overlying theprotruding structures (such as disposable gate structures (50, 52)) arenot exposed to radiation during the lithographic exposure, and areherein referred to as first non-crosslinked printable dielectricmaterial portions 70U. Portions of the printable dielectric materiallayer 70 overlying the gap-fill keyhole 61 are exposed to radiationduring the lithographic exposure to become parts of the crosslinkedprintable dielectric material portions 70E.

In one embodiment, the intensity of the exposed radiation may beadjusted so that the printable dielectric material layer in lowerportions of the gap-fill keyholes 61 is not crosslinked during thelithographic exposure process. In each gap-fill keyhole 61, an upperportion of the gap-fill keyhole 61 can be filled with a crosslinkedprintable dielectric material portion 70E after the lithographicexposure, and a lower portion of the gap-fill keyhole 61 can be filledwith a second non-crosslinked printable dielectric material portion 70Pafter the lithographic exposure. The first non-crosslinked printabledielectric material portions 70U and the second non-crosslinkedprintable dielectric material portions 70P include a non-crosslinkedprintable dielectric material that is the same as the material of theprintable dielectric material layer 70 as originally applied.

Referring to FIGS. 9A and 9B, the exposed printable dielectric materiallayer (70E, 70U, 70P) is developed to remove non-crosslinked portions ofthe printable dielectric material layer (70E, 70U, 70P) from above thetopmost surface of the planarization dielectric layer 60. Thus, thefirst non-crosslinked printable dielectric material portions 70U areremoved during development, while the crosslinked printable dielectricmaterial portions 70E are not removed. Further, because the secondnon-crosslinked printable dielectric material portions 70P are protectedfrom a developer solution by the overlying crosslinked printabledielectric material portions 70E, and the second non-crosslinkedprintable dielectric material portions 70P are not removed during thedevelopment.

Referring to FIGS. 10A and 10B, the protruding structures can beremoved. For example, if the protruding structures are disposable gatestructures (50, 52), the disposable gate structures (50, 52) can beremoved while the planarization dielectric layer 60, the semiconductorregion 10, and the crosslinked printable dielectric material portions70E are not removed by a substantial amount. The gate dielectric 50 maybe removed, or may remain in place.

At least one isotropic etch and/or at least one anisotropic etch can beemployed to remove the materials of the disposable gate structures (50,52) selective to the materials of the planarization dielectric layer 60,the semiconductor region 10, and the crosslinked printable dielectricmaterial portions 70E. In a non-limiting illustrative example, if thedisposable gate material portion 52 includes germanium at an atomicconcentration greater than 10%, hydrogen peroxide can be employed toremove the disposable gate material portion 52 selective to theplanarization dielectric layer 60. The disposable gate dielectrics 50can be removed, for example, by a wet etch.

Gate cavities 59 are formed in the volume from which the disposable gatestructures (50, 52) are removed. Semiconductor surfaces of thesemiconductor region 10 and/or dielectric surfaces of the shallow trenchisolation structures 20 can be exposed at the bottom of each gate cavity59.

Referring to FIGS. 11A and 11B, replacement gate structures are formedin the gate cavities 59. The replacement gate structures are gatestructures that replace the disposable gate structures (50, 52). Thereplacement gate structures can be formed by depositing a replacementgate dielectric layer and a replacement conductive material layer in thegate cavities 59. If the gate dielectric layer 50 is not removed, then areplacement gate dielectric layer 71 may be omitted in this step. Afterdeposition of the replacement conductive material layer, portions of thereplacement gate dielectric layer and the replacement conductivematerial layer that protrude above the topmost surface of theplanarization dielectric layer 60. Each remaining portion of thereplacement gate dielectric layer constitutes a U-shaped gate dielectric71, and each remaining portion of the replacement conductive materiallayer constitutes a gate electrode 72. A combination of a U-shaped gatedielectric 71 and a gate electrode 72 thereupon constitute a replacementgate structure (71, 72).

The replacement gate dielectric layer and the U-shaped gate dielectrics71 include a dielectric material, which can be silicon oxide, siliconnitride, silicon oxynitride, or a stack thereof. Alternately oradditionally, the replacement gate dielectric layer and the U-shapedgate dielectrics 71 can include a high dielectric constant (high-k)material layer having a dielectric constant greater than 8.0. In oneembodiment, the U-shaped gate dielectrics 71 can include a dielectricmetal oxide, which is a high-k material containing a metal and oxygen,and is known in the art as high-k gate dielectric materials. Dielectricmetal oxides can be deposited by methods well known in the artincluding, for example, chemical vapor deposition (CVD), physical vapordeposition (PVD), molecular beam deposition (MBD), pulsed laserdeposition (PLD), liquid source misted chemical deposition (LSMCD),atomic layer deposition (ALD), etc. Exemplary high-k dielectric materialinclude HfO₂, ZrO₂, La₂O₃, Al₂O₃, TiO₂, SrTiO₃, LaAlO₃, Y₂O₃,HfO_(x)N_(y), ZrO_(x)N_(y), La₂O_(x)N_(y), Al₂O_(x)N_(y), TiO_(x)N_(y),SrTiO_(x)N_(y), LaAlO_(x)N_(y), Y2O_(x)N_(y), a silicate thereof, and analloy thereof. Each value of x is independently from 0.5 to 3 and eachvalue of y is independently from 0 to 2. The thickness of the U-shapedgate dielectrics 71, as measured at a horizontal portion directly abovethe top surface of the semiconductor region 10, can be from 0.9 nm to 6nm, and preferably from 1.0 nm to 3 nm, although lesser and greaterthicknesses can also be employed.

The replacement conductive material layer and the gate electrodes 71include a conductive material, which can be a doped semiconductormaterial, a metallic material, or a combination thereof. The dopedsemiconductor material, if present, can be doped polysilicon, dopedpolycrystalline germanium, a doped silicon-germanium alloy, any otherdoped elemental or compound semiconductor material, or a combinationthereof. The metallic material, if present, can be any metallic materialthat can be deposited by chemical vapor deposition (CVD), physical vapordeposition (PVD), or a combination thereof. For example, the metallicmaterial can include aluminum and/or tungsten.

The top surfaces of each of the replacement gate structures (71, 72) canbe coplanar with the planar top surface of the planarization dielectriclayer 60. Filled gap-fill keyholes, i.e., gap-fill keyholes that arefilled, are embedded in the planarization dielectric layer 60. Eachfilled gap-fill keyholes can include a crosslinked printable dielectricmaterial portion 71E having a top surface that is coplanar with theplanar top surface of the planarization dielectric layer 60 located atan upper portion thereof, and a second non-crosslinked printabledielectric material portions 70P located at a lower portion thereof.

A pair of neighboring replacement gate structures (71, 72) can include afirst replacement gate structure (71, 72) and a second replacement gatestructure (71, 72) that are parallel to each other. If the firstreplacement gate structure (71, 72) and a second replacement gatestructure (71, 72) are laterally spaced by less than the minimumdimension discussed above, a filled gap-fill keyhole (70E, 70P) can bepresent between the pair of neighboring replacement gate structures (71,72) so that the lengthwise direction of the filled gap-fill keyhole(70E, 70P) is parallel to the sidewalls of the pair of neighboringreplacement gate structures (71, 72).

Referring to FIGS. 12A and 12B, a contact-level dielectric layer 80 andcontact via structures (82, 82′) are formed above the planarizationdielectric layer 60. The contact-level dielectric layer 80 can includeany material that can be employed as a dielectric material in metalinterconnect structures. For example, the contact-level dielectric layer80 can include doped or undoped silicate glass, silicon nitride,organosilicate glass, or a combination thereof. The contact viastructures (82, 82) include various types of conductive via structuresthat provide a conductive path to various semiconductor elements in thesemiconductor region 10 and the gate electrodes 72.

Referring to FIGS. 13A and 13B, a variation of the exemplarysemiconductor structure can be derived from the exemplary semiconductorstructure by selecting the intensity of irradiation during thelithographic exposure of the printable dielectric material layer 70 sothat the entirety of the gap-fill keyholes 61 is filled with thecrosslinked printable dielectric material portion after the lithographicexposure. Thus, the extent of the crosslinked printable dielectricmaterial portions 70E extends to the bottom of the gap-fill keyholes 61,and the volume of the second non-crosslinked printable dielectricmaterial portions 70P shrink to zero as the dose of irradiationincreases during the lithographic exposure step corresponding to FIGS.8A and 8B. In this case, the crosslinked printable dielectric materialportions 70E alone replaces the combination of the crosslinked printabledielectric material portions 70E and the second non-crosslinkedprintable dielectric material portions 70P as illustrated in FIGS. 9A,9B, 10A, 10B, 11A, 11B, 12A, and 12B to provide the variation of theexemplary semiconductor structure illustrated in FIGS. 13A and 13B.

While the disclosure has been described in terms of specificembodiments, it is evident in view of the foregoing description thatnumerous alternatives, modifications and variations will be apparent tothose skilled in the art. Accordingly, the disclosure is intended toencompass all such alternatives, modifications and variations which fallwithin the scope and spirit of the disclosure and the following claims.

1. A method of forming a structure comprising: forming protrudingstructures over a top surface of a substrate; forming a dielectric layerincluding a gap-fill keyhole on said substrate, wherein said dielectriclayer is present between neighboring pairs of said protrudingstructures; applying a printable dielectric material layer over saiddielectric layer, said printable dielectric material layer filling saidgap-fill keyhole; lithographically exposing a portion of said printabledielectric material layer with radiation, wherein a crosslinkedprintable dielectric material portion is formed at least within an upperportion of said gap-fill keyhole; and removing non-crosslinked portionsof said printable dielectric material layer from above said dielectriclayer.
 2. The method of claim 1, wherein said protruding structures aredisposable gate structures, and said method further comprises: removingsaid disposable gate structures selective to said dielectric layer toform gate cavities; and forming gate structures within said gatecavities by depositing at least one dielectric material and at least oneconductive material.
 3. The method of claim 2, wherein each of said gatestructures include a U-shaped gate dielectric and a gate electrode. 4.The method of claim 3, wherein a top surface of each of said gatestructures is coplanar with a top surface of said dielectric layer. 5.The method of claim 1, wherein said printable dielectric material layeris a self-planarizing material and has a top surface above a topmostsurface of said dielectric layer.
 6. The method of claim 1, wherein saidprintable dielectric material layer includes a polymer havinglight-sensitive unlinked crosslinkable bonds that become crosslinkedduring said lithographic exposure.
 7. The method of claim 1, whereinportions of said printable dielectric material layer overlying saidprotruding structures are not exposed to radiation during saidlithographic exposure, and a portion of said printable dielectricmaterial layer overlying said gap-fill keyhole are exposed to radiationduring said lithographic exposure.
 8. The method of claim 1, wherein anentirety of said gap-fill keyhole is filled with said crosslinkedprintable dielectric material portion after said lithographic exposure.9. The method of claim 1, wherein a lower portion of said gap-fillkeyhole is filled with a non-crosslinked printable dielectric materialafter said lithographic exposure.
 10. The method of claim 9, whereinsaid printable dielectric material layer includes a material selectedfrom hydrogen silsesquioxane (HSQ) and methyl silsesquioxane (MSQ). 11.A structure comprising a dielectric layer located on a substrate,wherein a filled gap-fill keyhole is embedded in said dielectric layer,said filled gap-fill keyhole including a crosslinked printabledielectric material portion having a top surface that is coplanar with atop surface of said dielectric layer.
 12. The structure of claim 11,wherein said dielectric layer includes a first dielectric material thatis different from a second dielectric material in said crosslinkedprintable dielectric material portion.
 13. The structure of claim 12,wherein said second dielectric material includes each of silicon,oxygen, carbon, and hydrogen at an atomic concentration greater than 1%.14. The structure of claim 12, wherein said first dielectric material isselected from silicon oxide, silicon nitride, silicon oxynitride,phosphosilicate glass (PSG), fluorosilicate glass (FSG),borophosphosilicate glass (BPSG), borosilicate glass (BSG), and acombination thereof.
 15. The structure of claim 12, wherein said firstdielectric material does not include carbon, and said second dielectricmaterial includes carbon.
 16. The structure of claim 11, furthercomprising a gate structure including a U-shaped gate dielectric and agate electrode embedded in said U-shaped gate dielectric, wherein abottom surface of said gate dielectric contacts a top surface of saidsubstrate.
 17. The structure of claim 16, further comprising anothergate structure including another U-shaped gate dielectric and anothergate electrode embedded in said another U-shaped gate dielectric,wherein said gate structure has a sidewall that is parallel to anothersidewall of said another gate structure, and a lengthwise direction ofsaid filled gap-fill keyhole is parallel to said sidewall and said othersidewall.
 18. The structure of claim 11, wherein an entirety of saidfilled gap-fill keyhole is filled with said crosslinked printabledielectric material portion.
 19. The structure of claim 11, wherein anupper portion of said filled gap-fill keyhole is filled with saidcrosslinked printable dielectric material portion, and a lower portionof said filled gap-fill keyhole is filled with a non-crosslinkedprintable dielectric material.
 20. The structure of claim 19, whereinsaid printable dielectric material is selected from hydrogensilsesquioxane (HSQ) and methyl silsesquioxane (MSQ).